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coefficient of resistance in Chinese

Pronunciation:
How to pronounce "coefficient of resistance""coefficient of resistance" in a sentence

Translationmobile phoneMobile

  • 安全系數(shù)
  • 阻力系數(shù)電阻系數(shù)

Examples

  • Resistance - temperature coefficient of resistance thermometer sensor
    熱電阻的電阻溫度系數(shù)
  • Temperature coefficient of resistance
    電阻溫度系數(shù)
  • Thermal coefficient of resistance of vanadium oxide film formed by lon - beam - enhanced deposition
    離子束增強沉積氧化釩薄膜的溫度系數(shù)
  • Method of test for temperature coefficient of resistance of alloy wire for precision resistors
    精密電阻器合金絲電阻溫度系數(shù)試驗方法
  • The coefficient of resistance to temperature of the nano - bulk al is more than 50 times that of ordinary al materials
    所測定的納米鋁塊體材料的電阻溫度系數(shù)是普通多晶鋁塊體材料的50多倍。
  • 5 . manganin thin films with low temperature coefficient of resistance were prepared by magnetron sputtering . the changes of tcr under difference deposition and heat treatment conditions were studied
    首次采用磁控濺射法沉積了低電阻溫度系數(shù)的錳銅薄膜，研究了在不同電子科技大學博士學位論文沉積及熱處理條件下薄膜tcr的變化。
  • Two chinese invention patents , which titled " manganin thin film ultra - high pressure sensors " and " preparation method of manganin thin films with low temperature coefficient of resistance " , have been applied based on the above original work of this thesis
    以上第l 3創(chuàng)新點及第5創(chuàng)新點已經(jīng)分別申請了兩項中國發(fā)明專利： “薄膜式錳銅超高壓力傳感器”和“低電阻溫度系數(shù)錳銅薄膜的制備方法” 。
  • Tcr ( temperature coefficient of resistance ) of the sample was measured . the measurement results showed that the tcr of the thin film which resistance range was under 45 - 60k was larger than that which resistance under 15 - 25k . at last the xps was used to analyze the composition of the films
    基片溫度的變化直接影響膜層的生長及特性，可以明顯地改善薄膜的機械強度和附著力，而且隨著基片溫度的升高，在磁控濺射過程中各個價態(tài)的釩容易向高價的釩進行轉(zhuǎn)換。
  • The average partical size of bismuth ruthenate and pbo - b _ 2o _ 3 - sio _ 2 glass was researched . the smaller bismuth ruthenate partical is , sheet resistivity is lower and temperature coefficient of resistance ( tcr ) is more positive and the refiring change ratio is nearer to zero . the limit size of bismuth ruthenate partical is 0 . 56 m
    研究了各相粉體平均粒徑對膜層性能的影響,結(jié)果表明:釕酸鉍平均粒徑越小,膜層的方阻值越小,電阻溫度系數(shù)偏正,重燒變化率越接近零值,球磨工藝的極限平均粒徑為0 . 56 m 。
  • A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film . after annealing , vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained . the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5 , so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation
    利用離子束增強沉積設(shè)備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然后經(jīng)適當?shù)耐嘶穑晒Φ刂苽淞藷犭娮铚囟认禂?shù)高達4的vo _ 2薄膜(國外報道值為2 - 3 ) ，并研制了單元懸空結(jié)構(gòu)探測器和8 1 ， 16 1線性陣列。
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